Tunneling field effect transistor using angled implants for...

Details Tunneling field effect transistor using angled implants for... Tunneling field effect transistor using angled implants for...

2005-05-13

2008-12-16

Nhu, David (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

C257S288000, C257S196000, C257S310000, C257SE21438, C257SE21637, C257SE21639, C257SE21703, C257SE27112, C257SE29255

Reexamination Certificate

active

07465976

ABSTRACT:
The present invention relates to a Tunnel Field Effect Transistor (TFET). which utilizes angle implantation and amorphization to form asymmetric source and drain regions. The IFET further includes a silicon germanium alloy epitaxial source region with a conductivity opposite that of the drain.

REFERENCES:
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patent: 6214679 (2001-04-01), Murthy et al.
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patent: 6995054 (2006-02-01), Oda et al.
patent: 7026232 (2006-04-01), Koontz et al.
patent: 2003/0143768 (2003-07-01), Chen et al.
patent: 2005/0285213 (2005-12-01), Datta et al.

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