Tunneling diode magnetic junction memory

Details Tunneling diode magnetic junction memory Tunneling diode magnetic junction memory

2005-11-15

2005-11-15

Le, Vu A. (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetic thin film

C365S175000, C365S105000

Reexamination Certificate

active

06965522

ABSTRACT:
A tunneling diode magnetic junction memory that eliminates the need for a separate semiconductor diode is disclosed. The diode is formed by an insulating layer that is located between a free magnetic layer and a pinned magnetic layer. The present invention further discloses a method of reading the contents of a memory cell in a bi-directional manner in order to extend a storage life of the memory cell.

REFERENCES:
patent: 5640343 (1997-06-01), Gallagher et al.
patent: 5793697 (1998-08-01), Scheuerlein
patent: 5801984 (1998-09-01), Parkin
patent: 5838608 (1998-11-01), Zhu et al.
patent: 5930164 (1999-07-01), Zhu
patent: 6347049 (2002-02-01), Childress et al.
patent: 6842368 (2005-01-01), Hayakawa

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