Tunnel transistor

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

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Details

257 17, H01L 2701, H01L 2712, H01L 2976, H01L 2994

Patent

active

055526225

ABSTRACT:
The present invention is to provide a compact and high speed tunnel transistor having a high input impedance, yet consuming only a small quantity of power. In a tunnel transistor according to the present invention, a gate electrode is provided via an insulating thin film on a Schottky junction which is a junction between a semiconductor and a metallic layer, a p-n.sup.+ junction between semiconductors, or an n-p.sup.+ junction between semiconductors so that an accumulation layer having a high carrier density is formed bear the surface of a semiconductor by adjusting a gate voltage Vg and thus a tunnel junction is formed between this accumulation layer and a metallic layer or a semiconductor having a high carrier density (n.sup.+ or p.sup.+) by adjusting the gate voltage Vg.

REFERENCES:
patent: 4644386 (1987-02-01), Nishizawa et al.
patent: 5177568 (1993-01-01), Hanma et al.

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