Tunnel injection semiconductor devices with Schottky barriers

Details Tunnel injection semiconductor devices with Schottky barriers Tunnel injection semiconductor devices with Schottky barriers

1991-07-30

1993-01-05

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257408, 257377, 257384, 257382, 257473, H01L 2948

Patent

active

051775689

ABSTRACT:
A tunnel injection type semiconductor device having an MIS structure comprising a semiconductor region, a source, a drain and a gate electrode, wherein said source and said drain are composed of a metal or metal compound member, respectively, and wherein both have an overlapping portion with said gate electrode. A first conductivity type high impurity concentration semiconductor layer is formed in said semiconductor region in contact with and contiguous to said metalic member at the drain side. The source provides a Schottky barrier junction to said semiconductor region while said drain provides an ohmic contact to said semiconductor region. Using this structure a tunneling current flowing across a Schottky barrier junction between said source and said drain is controlled by a gate voltage.

REFERENCES:
patent: 4690730 (1987-09-01), Tang et al.
patent: 5026657 (1991-06-01), Lee et al.
patent: 5049953 (1991-09-01), Mihara et al.
patent: 5061981 (1991-10-01), Hall

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