Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Non-heterojunction superlattice
Reexamination Certificate
2008-09-05
2010-11-16
Warren, Matthew E (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Non-heterojunction superlattice
C257S288000, C257SE29068, C257SE29073
Reexamination Certificate
active
07834345
ABSTRACT:
A semiconductor device includes a channel region; a gate dielectric over the channel region; a gate electrode over the gate dielectric; and a first source/drain region adjacent the gate dielectric. The first source/drain region is of a first conductivity type. At least one of the channel region and the first source/drain region includes a superlattice structure. The semiconductor device further includes a second source/drain region on an opposite side of the channel region than the first source/drain region. The second source/drain region is of a second conductivity type opposite the first conductivity type. At most, one of the first source/drain region and the second source/drain region comprises an additional superlattice structure.
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Bhuwalka Krishna Kumar
Diaz Carlos H.
Goto Ken-Ichi
Lee Wen-Chin
Wang Ching-Ya
Slater & Matsil L.L.P.
Taiwan Semiconductor Manufacturing Company , Ltd.
Warren Matthew E
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