Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Reexamination Certificate
2007-07-25
2010-10-12
Jackson, Jr., Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
C257S255000, C257S288000, C257S347000, C257S616000, C257SE29085, C257SE29246, C257SE29255
Reexamination Certificate
active
07812370
ABSTRACT:
A semiconductor device and the methods of forming the same are provided. The semiconductor device includes a low energy band-gap layer comprising a semiconductor material; a gate dielectric on the low energy band-gap layer; a gate electrode over the gate dielectric; a first source/drain region adjacent the gate dielectric, wherein the first source/drain region is of a first conductivity type; and a second source/drain region adjacent the gate dielectric. The second source/drain region is of a second conductivity type opposite the first conductivity type. The low energy band-gap layer is located between the first and the second source/drain regions.
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Bhuwalka Krishna Kumar
Goto Ken-Ichi
Chen Yu
Jackson, Jr. Jerome
Slater & Matsil L.L.P.
Taiwan Semiconductor Manufacturing Company , Ltd.
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