Tunnel effect transistors based on silicon nanowires

Details Tunnel effect transistors based on silicon nanowires Tunnel effect transistors based on silicon nanowires

2011-02-22

2011-02-22

Wilczewski, Mary (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S306000, C257S401000, C257SE27086, C257SE29134, C257SE29264, C438S301000, C438S096000, C438S365000, C977S700000, C977S762000

Reexamination Certificate

active

07893476

ABSTRACT:
Tunnel field-effect transistors (TFETs) are regarded as successors of metal-oxide semiconductor field-effect transistors (MOSFETs), but silicon-based TFETs typically suffer from low on-currents, a drawback related to the large resistance of the tunnel barrier. To achieve higher on-currents a nanowire-based TFET with a germanium (Ge) tunnel barrier in an otherwise silicon (Si) channel is used. A nanowire is introduced such that the lattice mismatch between silicon and germanium does not result in a highly defective interface. A dynamic power reduction as well as a static power reduction can result, compared to conventional MOSFET configurations. Multiple layers of logic can therefore be envisioned with these nanowire Si/Ge TFETs resulting in ultra-high on-chip transistor densities.

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