Tunnel dielectric comprising nitrogen for use with a...

Details Tunnel dielectric comprising nitrogen for use with a... Tunnel dielectric comprising nitrogen for use with a...

2011-04-12

2011-04-12

Vu, David (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S424000, C438S201000, C438S211000, C438S257000, C438S263000, C438S264000

Reexamination Certificate

active

07923364

ABSTRACT:
A method used during semiconductor device fabrication comprises forming at least two types of transistors. A first transistor type may comprise a CMOS transistor comprising gate oxide and having a wide active area and/or a long channel, and the second transistor type may comprise a NAND comprising tunnel oxide and having a narrow active area and/or short gate length. The transistors are exposed to a nitridation ambient. Various process embodiments and completed structures are disclosed.

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