Tungsten policide contacts for semiconductor devices

Details Tungsten policide contacts for semiconductor devices Tungsten policide contacts for semiconductor devices

1996-02-02

1998-11-17

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257336, 257344, 257408, 257382, 257383, 257384, 257506, 257621, 257774, H01L 2976

Patent

active

058380515

ABSTRACT:
A method for creating manufacturable polycide contacts, for use in advanced semiconductor designs using images as small as 0.35 uM, has been developed. An amorphous silicon film, is used as an underlay, to assist in the growth of an overlying tungsten silicide layer. The tungsten silicide deposition is performed using tungsten hexafluoride and silane, and in conjunction with the amorphous silicon underlay, results excellent step coverage in the narrow contact hole. A nitrogen anneal, using high flow rates, optimizes the adhesion characteristics of the tungsten polycide structure.

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