Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-08-07
2007-08-07
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S622000, C438S624000, C438S625000, C438S627000, C438S629000, C438S642000, C438S643000, C438S648000, C438S652000, C438S653000, C438S656000, C438S669000, C438S670000, C438S671000, C438S672000, C438S675000, C438S677000, C438S685000, C257SE21168, C257SE21185, C257SE21187, C257SE21189, C257SE21218
Reexamination Certificate
active
10602291
ABSTRACT:
Disclosed herein is a method of making integrated circuits. In one embodiment the method includes forming tungsten plugs in the integrated circuit and forming electrically conductive interconnect lines in the integrated circuit after formation of the tungsten plugs. At least one tungsten plug is electrically connected to at least one electrically conductive interconnect line. Thereafter at least one electrically conductive interconnect line is contacted with water for a period of time less than 120 minutes.
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Dauch Elizabeth A.
Jacobs John W.
Ahmadi Mohsen
Campbell Stephenson Ascolese LLP
Lebentritt Michael
NEC Electronics America, Inc.
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