Tungsten plug corrosion prevention method using gas sparged...

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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Reexamination Certificate

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06977215

ABSTRACT:
Disclosed herein is a method of making integrated circuits. In one embodiment the method includes forming tungsten plugs in a integrated circuit and forming electrically conductive interconnect lines after formation of the tungsten plugs, wherein at least one tungsten plug is electrically connected to at least one electrically conductive interconnect line. Separate from the formation of the tungsten plugs and electrically conductive interconnect lines, a gas is introduced into a liquid. At least one electrically conductive interconnect line is then contacted with the gas introduced liquid.

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Bothra, S., H. Sur and V. Liang, “A New Failure Mechanism by Corrosion of Tungsten in a Tungsten Plug Process,” Technology Development, VLSI Technology, Inc., San Jose, California, 95131; 1998 IEEE.

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