Tungsten local interconnect, using a silicon nitride capped self

Details Tungsten local interconnect, using a silicon nitride capped self Tungsten local interconnect, using a silicon nitride capped self

1998-09-04

1999-07-06

Quach, T. N.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257413, 257752, 257763, H01L 2976

Patent

active

059200987

ABSTRACT:
MOSFET devices, using a local interconnect structure, and silicon nitride capped, self-aligned contact openings, have been developed. The process features the creation of self-aligned contact openings, exposing specific source and drain regions. After deposition of a composite insulator layer, a second opening is formed in the composite insulator layer, again exposing various elements including the previously opened, specific source and drain regions. The local tungsten interconnect structure fills the second opening, contacts, as well as interconnects, the specific source and drain regions.

REFERENCES:
patent: 5075762 (1991-12-01), Kondo et al.
patent: 5223456 (1993-06-01), Malwah
patent: 5391520 (1995-02-01), Chen et al.
patent: 5451543 (1995-09-01), Woo et al.
patent: 5451545 (1995-09-01), Ramaswami et al.
patent: 5480837 (1996-01-01), Liaw et al.
patent: 5483104 (1996-01-01), Godinho et al.
patent: 5677563 (1997-10-01), Cronin et al.
patent: 5814862 (1998-09-01), Sung et al.
patent: 5814886 (1998-09-01), Mano
patent: 5879986 (1999-03-01), Sung
"Self-Aligned Contact Technology", IBM Technical Disclosure Bulletin, vol. 36, No. 4, Apr. 1993, pp. 445-446.

Affiliated with

Also associated with

Rating

Tungsten local interconnect, using a silicon nitride capped self does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Tungsten local interconnect, using a silicon nitride capped self, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Tungsten local interconnect, using a silicon nitride capped self will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-901370