Tungsten chemical vapor deposition process for suppression of vo

Details Tungsten chemical vapor deposition process for suppression of vo Tungsten chemical vapor deposition process for suppression of vo

1995-10-13

1997-07-01

Beck, Shrive

Coating processes

Coating by vapor, gas, or smoke

Metal coating

427251, 427253, 4272555, 4272557, C23C 1608

Patent

active

056436327

ABSTRACT:
A two-step nucleation W-CVD process has been developed to suppress volcano formation which usually appears at W/TiN boundary. The process using different combination of spacing of W-CVD chamber between the shower head and heater and chamber pressure has been used to form an uniform nucleation layer (with uniformity of 5-6%). An uniform nucleation layer can prevent WF.sub.6 penetration during W-bulk deposition. Moreover, the reaction between WF.sub.6 and Ti can be suppressed. The formation of volcano at the clamp area around the wafer edge can be effectively reduced.

REFERENCES:
patent: 5328722 (1994-07-01), Ghanayem et al.
patent: 5342652 (1994-08-01), Foster et al.
patent: 5407698 (1995-04-01), Emesh
patent: 5489552 (1996-02-01), Merchant et al.

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