Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2007-11-27
2007-11-27
Wilczewski, Mary (Department: 2822)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C365S171000, C257S420000
Reexamination Certificate
active
11260907
ABSTRACT:
Apparatus and methods for optimizing a toggle window for a magnetic tunnel junction (MTJ) having a multicomponent free layer are provided. In accordance with an aspect of the invention, a MTJ comprises a free layer, a pinned layer, and a barrier layer formed between the free layer and the pinned layer. The free layer, in turn, includes a plurality of free magnetic sublayers while the pinned layer includes a plurality of pinned magnetic sublayers. Each of the pinned magnetic sublayers exerts a magnetic field on the free magnetic sublayers. To optimize the toggle window for the device, the dimensions of each of the pinned magnetic sublayers are selected to substantially equalize average magnetic fields acting on each of the free magnetic sublayers.
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Abraham David W.
Worledge Daniel Christopher
Patton Paul E
Ryan & Mason & Lewis, LLP
Tuchman Ido
Wilczewski Mary
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