Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-03-17
2010-02-16
Dang, Trung (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S121000, C257S157000, C257SE23002
Reexamination Certificate
active
07663190
ABSTRACT:
A tunable voltage isolation ground to ground ESD clamp is provided. The clamp includes a dual-direction silicon controlled rectifier (SCR) and trigger elements. The SCR is coupled between first and second grounds. The trigger elements are also coupled between the first and second grounds. Moreover, the trigger elements are configured to provide a trigger current to the dual-direction silicon controlled rectifier when a desired voltage between the first and second grounds is reached.
REFERENCES:
patent: 6011681 (2000-01-01), Ker et al.
patent: 6258634 (2001-07-01), Wang et al.
patent: 6469353 (2002-10-01), Amerasekera et al.
patent: 6933540 (2005-08-01), Liu et al.
patent: 2002/0017654 (2002-02-01), Lee et al.
patent: 2002/0079538 (2002-06-01), Su et al.
patent: 2004/0084730 (2004-05-01), Morishita
patent: 2005/0151160 (2005-07-01), Salcedo et al.
patent: 2007/0029981 (2007-02-01), Johnson et al.
International Searching Authority, “International Search Report”, Dec. 8, 2008, Published in: WO.
Dang Trung
Fogg & Powers LLC
Intersil America's Inc.
LandOfFree
Tunable voltage isolation ground to ground ESD clamp does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Tunable voltage isolation ground to ground ESD clamp, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Tunable voltage isolation ground to ground ESD clamp will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4160826