Tunable threshold SOI device using back gate and intrinsic chann

Details Tunable threshold SOI device using back gate and intrinsic chann Tunable threshold SOI device using back gate and intrinsic chann

1998-06-11

2000-08-08

Meier, Stephen D.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257347, H01L 2978, H01L 3300

Patent

active

061005673

ABSTRACT:
In a fully depleted SOI device having a back gate structure, the channel region of the device is formed of an intrinsic or pseudo-intrinsic semiconductor. This has the effect of reducing an unbiased threshold of the device, as well as substantially reducing threshold variations normally associated with variations in dopant concentrations, while providing a means to electrically tune the threshold voltage by adjusting a potential applied to the back gate structure.

REFERENCES:
patent: 5616944 (1997-04-01), Mizutani et al.

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