Tunable semiconductor diodes

Details Tunable semiconductor diodes Tunable semiconductor diodes

2006-10-10

2006-10-10

Jackson, Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S546000, C257SE27016

Reexamination Certificate

active

07119401

ABSTRACT:
A diode structure that facilitates tuning the breakdown voltage of the diode structure, and a method for forming and operating the diode structure. In a P− substrate, a N+ layer is implanted. The N+ layer has an opening whose size affects the breakdown voltage of the diode structure. Upon the N+ layer, an N− layer is implanted in the substrate. Then, a P+ region is formed to serve as an anode of the diode structure. An N+ region can be formed on the surface of the substrate to serve as a cathode of the diode structure. By changing the size of the opening in the N+ layer during fabrication, the breakdown voltage of the diode structure can be changed (tuned) to a desired value.

REFERENCES:
patent: 5223737 (1993-06-01), Canclini
patent: 5426320 (1995-06-01), Zambrano
patent: 5708289 (1998-01-01), Blanchard
patent: 2003/0047750 (2003-03-01), Russ et al.

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