Tunable dielectric device and process relating thereto

Details Tunable dielectric device and process relating thereto Tunable dielectric device and process relating thereto

2006-06-13

2006-06-13

Nguyen, Ha (Department: 2812)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S778000, C534S011000, C534S015000

Reexamination Certificate

active

07060636

ABSTRACT:
The present invention is directed toward a tunable dielectric device comprising: a substrate and an endohedral fullerene encapsulating trimetallic nitride template compound disposed on the substrate. The endohedral fullerene encapsulating trimetallic nitride template compound has a dipole moment that is oriented when a voltage of less than about 5 volts is applied thereto causing a change in the orientation of the dipole moment of the compound. The physical dimension of the compound is essentially unchanged.

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