Truncated susceptor for vapor-phase deposition

Details Truncated susceptor for vapor-phase deposition Truncated susceptor for vapor-phase deposition

1999-05-07

2000-12-12

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

117 84, 117 89, 118715, 118728, C30B 2512

Patent

active

061592870

ABSTRACT:
A vapor-phase deposition system includes one or more channel units for promoting the downstream passage of reagent gases. A reactor of a vapor-phase deposition system may include one or more channels to promote passage of reagent gases beneath a susceptor stage. A susceptor, for arrangement within a reactor during epitaxial growth on a substrate, may include a truncated stage and a truncation side. The substrate may be aligned with a lower edge of the truncated stage, thereby avoiding chemical deposition on surfaces upstream of the substrate. One or more channels of the susceptor promote the downstream passage of reagent gases within the reactor. Methods for vapor-phase deposition and for promoting downstream passage of reagent gases within a reactor are also disclosed.

REFERENCES:
patent: 4522149 (1985-06-01), Garbis et al.
patent: 4807562 (1989-02-01), Sandys
patent: 4926793 (1990-05-01), Arima et al.
patent: 5944904 (1999-08-01), Jackson

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