Electronic digital logic circuitry – Tri-state
Reexamination Certificate
2000-09-15
2002-10-01
Lam, Tuan T. (Department: 2816)
Electronic digital logic circuitry
Tri-state
C326S057000, C326S058000
Reexamination Certificate
active
06459299
ABSTRACT:
BACKGROUND OF THE INVENTION
The present invention relates to a tristate buffer.
Shown in
FIG. 1
is a logic circuit diagram of a typical tristate buffer.
In
FIG. 1
, an input signal INs is fed to an inverter INV
20
via a signal input terminal IN. The output signal of the inverter INV
20
is fed to an inverter INV
21
. A clock signal CLK and an enable signal EN are fed to a 2-input NAND gate
21
. The output signal of the NAND gate
21
is fed to an inverter INV
22
. The output signals of the inverters INV
21
and INV
22
are fed to a 2-input NAND gate
22
. The output signals of the inverters INV
20
and INV
22
are fed to a 2-input NAND gate
23
. The output signal of the NAND gate
23
is fed to an inverter INV
23
. The output signal of the NAND gate
22
is fed to the gate of a P-channel MOS transistor P
21
connected across a power supply terminal VDD and a signal output terminal OUT for generating an output signal OUTS. The output signal of the inverter INV
23
is fed to the gate of an N-channel MOS transistor N
21
connected across the signal output terminal OUT and a ground terminal GND.
Shown in
FIG. 2
is a logic circuit diagram of another typical tristate buffer.
The tristate buffer of
FIG. 2
is different from that shown in
FIG. 1
in that it does not have an inverter for inverting an input signal, such as, the inverter INV
20
shown in FIG.
1
. An output signal /OUTs is generated at the signal output terminal OUT, which is an inverted signal of the output signal OUTs shown in FIG.
1
. The sign “/” indicates logic inversion hereinafter.
The operation of the tristate buffer shown in
FIG. 1
only is explained because that of the tristate buffer of
FIG. 2
is almost the same.
The timing chart for signals on the tristate buffer (
FIG. 1
) is shown in FIG.
3
.
The clock signal CLK having a period of T
0
offers a pre-charging period to the tristate buffer while the signal CLK is in a L (low)-level state. The P-and N-channel MOS transistors P
21
and N
21
(the output stage) are off during the pre-charging period, thus the signal output terminal OUT having high impedance.
On the other hand, the clock signal CLK offers an evaluation period while it is in a H (high)-level state. The enable signal EN in a L-level state during the evaluation period makes the signal output terminal OUT continuously having high impedance.
The output signal OUTs goes to a H-level state when the input signal INs goes to a H-level state while the enable signal EN is in a H-level state. On the other hand, the output signal OUTs goes to a L-level state when the input signal INs goes to a L-level state while the enable signal EN is in the H-level state.
The tristate buffer must have a sufficient set-up time S
0
for the input signal INs against a leading timing of the clock signal CLK. In other words, as shown in
FIG. 3
, a sufficient set-up time So should be provided for the input signal INs for the transition from an unstable state between H- and L-levels to a stable state in a H- or a low-level before the leading timing of the clock signal CLK.
Transition from the unstable to stable states behind the leading timing of the clock signal CLK would cause discharging at the signal out terminal OUT to bring the circuitry (not shown) connected to the terminal OUT into a malfunction.
The sooner the better for the tristate buffer to have a set-up time S
0
for achieving a higher operating speed. When the output passage of the input signal INs from an input signal generator (not shown) is the critical path, an operation period of the input signal generator and the tristate buffer is obtained by addition of a period of generating the input signal INs and a set-up time S
0
. In other words, the sooner to have a set-up time S
0
, the higher the operating frequency.
The tristate buffer shown in
FIG. 1
is, however, provided with two inverters (INV
20
and INV
21
) connected in series between the signal input terminal IN and the 2-input NAND gate NAND
22
. The installation of such inverters causes a delay D
0
for the output signal OUTs as shown in
FIG. 3
, thus having a slow operating speed.
In order to solve such a problem, the tristate buffer shown in
FIG. 2
is provided with only one inverter INV
21
between the signal input terminal IN and the 2-input NAND gate NAND
22
.
The tristate buffer (
FIG. 2
) is, however, put under load corresponding to P- and N-channel MOS transistors that constitute the inverter INV
21
and also those constituting the 2-input NAND gate NAND
23
when looked from the signal input IN.
This results in increase in load for the tristate buffer shown in
FIG. 2
compared to that shown in
FIG. 1
, thus no increase in operating speed.
SUMMARY OF THE INVENTION
A purpose of the present invention is to provide a tristate buffer that operates at a high operating speed by reduction of load when looked from an signal input terminal to produce a small signal delay.
The present invention provides a tristate buffer including: a logic circuit to output a H (high)-level signal when H-level clock and enable signals are input thereto; a first P-channel MOS transistor having a source connected to a power supply terminal of the tristate buffer and a gate to which the output signal of the logic circuit is supplied; a second P-channel MOS transistor having a source connected to the power supply terminal and a gate to which the output signal of the logic circuit is supplied; a third P-channel MOS transistor having a source connected to the power supply terminal, a gate connected to a drain of the second P-channel MOS transistor, and a drain connected to a drain of the first P-channel MOS transistor; a fourth P-channel MOS transistor having a source connected to the power supply terminal, a gate connected to the drain of the first P-channel MOS transistor, and a drain connected to the drain of the second P-channel MOS transistor; a first N-channel MOS transistor having a drain connected to the drains of the first and the third P-channel MOS transistors and a gate to which the output signal of the logic circuit is supplied; a second N-channel MOS transistor having a drain connected to the drains of the second and the fourth P-channel MOS transistors and a gate to which the output signal of the logic circuit is supplied; a third N-channel MOS transistor connected between a source of the first N-channel MOS transistor and a ground terminal of the tristate buffer, a first input signal being fed to a gate of the third N-channel MOS transistor; a fourth N-channel MOS transistor connected between the source of the second N-channel MOS transistor and the ground terminal, a second input signal being fed to a gate of the fourth N-channel MOS transistor; an inverter having an input terminal connected to the drains of the first and the third P-channel MOS transistors and also the first N-channel MOS transistor; a fifth P-channel MOS transistor connected between the power supply terminal and an signal output terminal of the tristate buffer, a gate of the fifth P-channel MOS transistor being connected to the drains of the second and the fourth P-channel MOS transistors and also the second N-channel MOS transistor; and a fifth N-channel MOS transistor connected between the signal output terminal and the ground termial, an output signal of the inverter being fed to a gate of the fifth N-channel MOS transistor.
Moreover, the present invention provides a tristate buffer including: a logic circuit to output a H (high)-level signal when H-level clock and enable signals are input thereto; a first P-channel MOS transistor having a source connected to a power supply terminal of the tristate buffer and a gate to which the output signal of the logic circuit is supplied; a second P-channel MOS transistor having a source connected to the power supply terminal and a gate to which the output signal of the logic circuit is supplied; a third P-channel MOS transistor having a source connected to the power supply terminal, a gate connected to a drain of the second P-channel MOS transistor, and a drain connected to a drain
Hayakawa Shigeyuki
Hirano Masashi
Yoshida Takeshi
Kabushiki Kaisha Toshiba
Lam Tuan T.
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
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