Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – Self-aligned
Reexamination Certificate
2005-01-04
2005-01-04
Pham, Long (Department: 2814)
Semiconductor device manufacturing: process
Forming bipolar transistor by formation or alteration of...
Self-aligned
C257S592000, C257S593000, C438S322000
Reexamination Certificate
active
06838350
ABSTRACT:
A method for fabricating a bipolar transistor includes forming a first region of a first conductivity type in a semiconductor structure to form a collector region and forming a second region of a second conductivity type in the first region to form a base region. A first mask is applied including an opening defining an emitter region of the bipolar transistor. The method further includes a triple implantation process using the first mask. Thus, a third region of the first conductivity type is formed in the first region and overlaid the second region. A fourth region of the second conductivity type is formed in the second region and is more heavily doped than the second region. A fifth region of the first conductivity type is formed in the second region and above the fourth region. The fifth region forms the emitter region of the bipolar transistor.
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Tadanori Yamaguchi et al., “Process and Device Optimization of an Analog Complementary Bipolar IC Technology With 5.5-Ghz ƒtPNP Transistors”, IEEE Transactions On Electron Devices, vol. 41, No. 6, Jun. 1994, pp 1019-1025.
Garnett Martin E.
McCormack Steve
Yoo Ji-hyoung
Zhang Peter
Cook Carmen C.
Micrel Inc.
Patent Law Group LLP
Pham Long
Pizarro-Crespo Marcos D.
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