Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-10-17
2006-10-17
Ngô, Ngân V. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE27065, C257SE21630
Reexamination Certificate
active
07122867
ABSTRACT:
The present invention discloses a triple well structure, which includes a substrate of a first conductive type, a deep buried well of a second conductive type, a well of a first conductive type, a well ring of a second conductive type, and a well ring of a first conductive type. The deep buried well of the second conductive type is in the substrate. The well of the first conductive type is disposed over the deep buried well of the second conductive type in the substrate. The well ring of the second conductive type surrounds the well of the first conductive type. The well ring of the first conductive type is between the well of the first conductive type and the well ring of the second conductive type.
REFERENCES:
patent: 6320232 (2001-11-01), Gossner et al.
patent: 6573588 (2003-06-01), Kumamoto et al.
patent: 6979869 (2005-12-01), Chen et al.
patent: 2003/0053335 (2003-03-01), Hart et al.
patent: 2004/0164354 (2004-08-01), Mergens et al.
patent: 2005/0093073 (2005-05-01), Baird et al.
J.C. Patents
Ngo Ngan V.
United Microelectronics Corp.
LandOfFree
Triple well structure and method for manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Triple well structure and method for manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Triple well structure and method for manufacturing the same will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3641142