Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1999-02-01
2000-08-29
Loke, Steven H.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257402, 257345, 257344, 257409, H01L 27108, H01L 2976, H01L 2994, H01L 31119
Patent
active
061112836
ABSTRACT:
A triple well structure for an embedded dynamic random access memory uses an ion implantation performed on a portion of the first conductive type substrate between a second conductive type source and a second conductive type deep well. A first conductive type block region is formed between the second conductive type source and the second conductive type deep well.
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patent: 5691560 (1997-11-01), Sakakibara
patent: 5792699 (1998-08-01), Tsui
Huang Hsiu-Wen
Yang Johnny
Huang Jiawei
Loke Steven H.
Patents J. C.
Tran Thien F.
United Semiconductor Corp.
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