Triple sample sensing for magnetic random access memory...

Details Triple sample sensing for magnetic random access memory... Triple sample sensing for magnetic random access memory...

2005-03-29

2005-03-29

Nguyen, Van Thu (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S175000, C365S189070, C365S189090, C365S210130

Reexamination Certificate

active

06873544

ABSTRACT:
A data storage device that includes an array of resistive memory cells. The resistive memory cells may include a magnetic tunnel junction (MTJ) and a thin-film diode. The device may include a circuit that is electrically connected to the array and that is also capable of monitoring a signal current flowing through a selected memory cell. Once the signal current has been monitored, the circuit is capable of comparing the signal current to an average reference current in order to determine which of a first resistance state and a second resistance state the selected memory cell is in. Also, a method for operating the data storage device.

REFERENCES:
patent: 5640343 (1997-06-01), Gallagher et al.
patent: 6188615 (2001-02-01), Perner et al.
patent: 6259644 (2001-07-01), Tran et al.
patent: 6317376 (2001-11-01), Tran et al.
patent: 6385111 (2002-05-01), Tran et al.

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