Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-10-13
2008-12-30
Dang, Phuc T (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S290000, C438S048000
Reexamination Certificate
active
07470946
ABSTRACT:
A triple-junction complimentary metal-oxide-semiconductor (CMOS) filterless color imager cell is provided. The imager cell is made from a bulk silicon (Si) substrate. A photodiode set including a first, second, and third photodiode are formed as a triple-junction structure in the Si substrate. A transistor set is connected to the photodiode set, and detects an independent output signal for each photodiode. Typically, the transistor set is formed in the top surface of the substrate. For example, the Si substrate may be a p-doped Si substrate, and the photodiode triple-junction structure includes the first photodiode forming a pn junction from an n+-doped region at the Si substrate top surface, to an underlying p-doped region. The second photodiode forms a pn junction from the p-doped region to an underlying n-well, and the third photodiode forms a pn junction from the n-well to the underlying p-doped Si substrate.
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K.M.Findlatera, P.B.Denyerb, R.K.Hendersonb, J.E.D.Hurwitzb, J.M.Raynorb, D.Renshawa, “Buried double junction pixel using green and magenta filters”, pp. 60-64, 1999.
Hsu Sheng Teng
Lee Jong-Jan
Dang Phuc T
Law Office of Gerald Maliszewski
Maliszewski Gerald
Sharp Laboratories of America Inc.
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