Triple diffused lateral resurf insulated gate field effect trans

Details Triple diffused lateral resurf insulated gate field effect trans Triple diffused lateral resurf insulated gate field effect trans

1993-07-21

1994-09-13

Thomas, Tom

Fishing, trapping, and vermin destroying

437 29, 437 45, 437149, 148DIG126, H01L 21266

Patent

active

053468350

ABSTRACT:
A triple-diffused lateral RESURF transistor (55,57) uses a threshold voltage adjust implant (52, 54) in conjunction with a thinner gate oxide (64) to yield a device which is more compatible with CMOS VLSI manufacturing processes and which delivers better performance characteristics than more conventional double-diffused RESURF transistor devices.

REFERENCES:
patent: 4593458 (1986-06-01), Adler
patent: 4705759 (1987-11-01), Lidow et al.
patent: 4798810 (1989-01-01), Blanchard et al.
patent: 4904614 (1990-02-01), Fisher et al.
patent: 4914047 (1990-04-01), Seki
patent: 5156989 (1992-10-01), Williams et al.
"High Voltage Thin Layer Devices (Resurf Devices)", J. A. Appels and H. M. J. Vaes, IEEE, 1979, pp. 238-241.

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