Trilayer lithographic process

Details Trilayer lithographic process Trilayer lithographic process

1992-07-28

1994-12-06

Brammer, Jack P.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Radiation sensitive composition or product or process of making

430273, 430311, 430313, 430314, 430316, 430317, 430318, 430319, 430322, 430323, 430324, 430325, 430326, G03C 1492

Patent

active

053709691

ABSTRACT:
The invention provides a trilayer structure and photolithographic method which permits use of high-resolution optics with a relatively small depth of focus for patterning a substrate. A trilayer lithographic structure in accordance with the invention comprises: (a) an out-gas resistant planarization layer deposited on a substrate; (b) a chemical-vapor-deposited interfacial film formed on the planarization layer; and (c) a photosensitive resist layer of a thickness equal to or less than one micron deposited on the interfacial film. A method in accordance with the invention comprises the steps of: (a) depositing an out-gas resistant planarization layer on a substrate; (b) chemical-vapor-depositing an interfacial film on the planarization layer; and (c) forming a photosensitive resist layer of a thickness equal to or less than one micron on the interfacial film.

REFERENCES:
patent: 4810617 (1989-03-01), White et al.
patent: 4983537 (1991-01-01), Wei
patent: 5077234 (1991-12-01), Scoopo et al.
patent: 5219788 (1993-06-01), Abernathey et al.

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