Tri-voltage Bi-CMOS semiconductor device

Details Tri-voltage Bi-CMOS semiconductor device Tri-voltage Bi-CMOS semiconductor device

1998-03-03

2000-11-21

Loke, Steven H.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257370, 257371, 257549, H01L 2976, H01L 2994, H01L 31062, H01L 2900

Patent

active

061506990

ABSTRACT:
A Bi-CMOS semiconductor device having a CMOS device region and a bipolar transistor region is provided wherein the bipolar transistor has a collector region of a first conductivity type and the CMOS region has at least one element region of a second conductivity type which is positioned adjacent to the collector region as well as wherein a single buried layer of the first conductivity type is provided which extends under the element region of the CMOS region and the collector region.

REFERENCES:
patent: 5105252 (1992-04-01), Kim et al.
patent: 5376816 (1994-12-01), Nishigoori et al.

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