Tri-state IIL gate

Static information storage and retrieval – Read/write circuit – For complementary information

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

307443, 307473, 307475, 307477, 3072963, 365154, H03K 1902, H03K 19092, G11C 1100

Patent

active

048414840

ABSTRACT:
A semiconductor integrated circuit device comprising a logic circuit which is constituted by using tri-state IIL gates. The tri-state IIL gates are particularly arranged to have first and second inputs. If the second input has a first level, the circuit will operate as a normal IIL circuit to provide high and low outputs in response to the first input. However, if the second input has a second level, the circuit will provide a floating output regardless of the first input. The transistors of the IIL circuit can be formed in an island in the substrate, with the potential of the island serving as the second input. In a preferred arrangement, the first level of the second input can be obtained by grounding the island while the second level is obtained by disconnecting the island from ground. These tri-state IIL gates are particularly advantageous to form a transfer gate for an IIL memory similar to the transfer gates used for MOS memories. They can also be used for forming various other logic gate arrangements.

REFERENCES:
patent: 4390802 (1983-06-01), Woltz

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Tri-state IIL gate does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Tri-state IIL gate, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Tri-state IIL gate will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-530352

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.