Tri-level resist process for fine resolution photolithography

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device

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430312, 430313, 430314, 430323, 430324, 430325, 430322, G03F 726

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047328410

ABSTRACT:
A multilayer photoresist system for defining very small features on a semiconductor substrate relies on forming a planarization layer directly over the substrate. An image transfer layer is formed over the planarization layer, and a photoresist imaging layer formed over the image transfer layer. The image transfer layer comprises an organic or inorganic resin which has been cured in a non-oxidated plasma. It has been found that such a curing technique provides a particularly smooth and defect-free image transfer layer. Very thin photoresist imaging layers may thus be formed over the image transfer layer, allowing very high lithographic resolution in the imaging layer. The resulting high resolution openings may then be transferred downward to the image transfer layer and planarization layer by etching, allowing the formation of very small geometries on the substrate surface.

REFERENCES:
patent: 3969543 (1976-07-01), Roberts et al.
patent: 4004044 (1977-01-01), France et al.
patent: 4041190 (1977-08-01), Dubois et al.
patent: 4202914 (1980-05-01), Hauas et al.
patent: 4222792 (1980-09-01), Lever et al.
patent: 4253888 (1981-03-01), Kikuchi
patent: 4507384 (1985-03-01), Morita et al.
patent: 4524121 (1985-06-01), Gleim et al.
patent: 4599243 (1986-07-01), Sachdev et al.
Fried, L. J., et al., IBM J. Res. Dev., vol. 26, No. 3, pp. 362-371, 5/1982.
P. Burggraaf, "Multilayer Resist Processing Update", Semiconductor International (Aug. 1985), pp. 88-92.
N. J. Chou et al., "Mechanism of Oxygen Plasma Etching of Polydimethyl Siloxane Films," Appl. Phys. Lett. (Jan. 1985), 46(1):31-33.
E. D. Roberts, "Improvements to the Dry-Etch Resistance of Sensitive Positive-Working Electron Resists," Proc. SPIE-Int. Soc. Opt. Eng. (1985), 539:124-130.
V. S. Nguyen et al., "Plasma Deposited Organosilicon Polymers--Deposition, Characterization, and Application in Multi-Layer Resist," Proc.-Electrochem. Soc. (1985), 85-1:299-316.
J. Paraszczak et al., "Multilayer Resist Systems Using Polysiloxanes as Etch Masks," Proc. SPIE-Int. Soc. Opt. Eng. (1983), 393:8-19.
K. G. Sachdev, "Characterization of Plasma-Deposited Organosilicon Thin Films," Thin Solid Films (1983), 107(3):24-50.
"SR 80M Silicone Electrical Resin," General Electric Rubber and Fluid Products Dept., Preliminary Product Profile, undated.
"SR 80M Silicone Mica Bonding and Moisture Resistant Varnish," General Electric, Silicone Product Data, Product Data Sheet, Jul. 1985.
"Improved Photoresists for Integrated Circuit Chips Devised," Chemical & Engineering News (Oct. 7, 1985), pp. 27-30.

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