Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-05-24
2008-10-14
Hu, Shouxiang (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S040000, C257S353000, C257SE21442, C977S936000, C977S937000, C977S938000
Reexamination Certificate
active
07436033
ABSTRACT:
A tri-gated molecular field effect transistor includes a gate electrode formed on a substrate and having grooves in a source region, a drain region and a channel region, and at least one molecule inserted between the source and drain electrodes in the channel region. The effects of the gate voltage on electrons passing through the channel can be maximized, and a variation gain of current supplied between the source and drain electrodes relative to the gate voltage can be greatly increased. Thus, a molecular electronic circuit having high functionality and reliability can be obtained.
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Choi Sung Yool
Park Chan Woo
Pi Ung Hwan
Yu Han Young
Electronics and Telecommunications Research Institute
Hu Shouxiang
Lowe Hauptman & Ham & Berner, LLP
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