Tri-gate devices and methods of fabrication

Details Tri-gate devices and methods of fabrication Tri-gate devices and methods of fabrication

2006-02-28

2006-02-28

Cao, Phat X. (Department: 2814)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S595000

Reexamination Certificate

active

07005366

ABSTRACT:
The present invention is a semiconductor device comprising a semiconductor body having a top surface and laterally opposite sidewalls formed on a substrate. A gate dielectric layer is formed on the top surface of the semiconductor body and on the laterally opposite sidewalls of the semiconductor body. A gate electrode is formed on the gate dielectric on the top surface of the semiconductor body and adjacent to the gate dielectric on the laterally opposite sidewalls of the semiconductor body.

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