Tri-gate devices and methods of fabrication

Details Tri-gate devices and methods of fabrication Tri-gate devices and methods of fabrication

2005-07-05

2005-07-05

Cao, Phat X. (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S389000, C257S395000

Reexamination Certificate

active

06914295

ABSTRACT:
The present invention is a semiconductor device comprising a semiconductor body having a top surface and laterally opposite sidewalls formed on a substrate. A gate dielectric layer is formed on the top surface of the semiconductor body and on the laterally opposite sidewalls of the semiconductor body. A gate electrode is formed on the gate dielectric on the top surface of the semiconductor body and adjacent to the gate dielectric on the laterally opposite sidewalls of the semiconductor body.

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