Tri-gate and gate around MOSFET devices and methods for...

Details Tri-gate and gate around MOSFET devices and methods for... Tri-gate and gate around MOSFET devices and methods for...

2007-08-21

2007-08-21

Wojciechowicz, Edward (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S288000, C257S330000, C257S368000, C257S401000, C257S618000

Reexamination Certificate

active

10348911

ABSTRACT:
A triple gate metal-oxide semiconductor field-effect transistor (MOSFET) includes a fin structure, a first gate formed adjacent a first side of the fin structure, a second gate formed adjacent a second side of the fin structure opposite the first side, and a top gate formed on top of the fin structure. A gate around MOSFET includes multiple fins, a first sidewall gate structure formed adjacent one of the fins, a second sidewall gate structure formed adjacent another one of the fins, a top gate structure formed on one or more of the fins, and a bottom gate structure formed under one or more of the fins.

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