Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Ion implantation of dopant into semiconductor region
Patent
1997-12-15
1999-03-30
Quach, T. N.
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Ion implantation of dopant into semiconductor region
438533, 438597, 438640, 438647, 438657, H01L 2128
Patent
active
058888870
ABSTRACT:
A method of forming a buried contact junction without forming a buried contact trench and without a disconnection gap in the current path by using a tapered polysilicon profile and a large angle tilt buried contact implant is described. A layer of gate silicon oxide is provided over the surface of a semiconductor substrate. A first polysilicon layer is deposited overlying the gate silicon oxide layer. The first polysilicon layer is etched away where it is not covered by a buried contact mask to provide an opening to the semiconductor substrate wherein the first polysilicon layer is tapered such that the bottom of the opening has a width the size of the planned buried contact and wherein the top of the opening has a width larger than the size of the planned buried contact. Ions are implanted at a tilt angle into the substrate within the opening whereby the ions penetrate the substrate laterally underlying with said first polysilicon layer to form the buried contact. A second layer of polysilicon is deposited over the first polysilicon layer and over the semiconductor substrate within the opening and patterned to form a polysilicon contact overlying the buried contact junction to complete formation of a buried contact in the fabrication of an integrated circuit.
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Dai Xuechun
Hua Guangping
Li Xudong
Tiew Kei Tee
Ackerman Stephen B.
Chartered Semiconductor Manufacturing Ltd.
Pike Rosemary L. S.
Quach T. N.
Saile George O.
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