Trenched semiconductor devices and their manufacture

Details Trenched semiconductor devices and their manufacture Trenched semiconductor devices and their manufacture

2005-10-18

2005-10-18

Kang, Donghee (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S328000, C257S329000, C438S259000, C438S270000, C438S271000

Reexamination Certificate

active

06956264

ABSTRACT:
In semiconductor devices which include an insulated trench electrode (11) in a trench (20), for example, trench-gate field effect power transistors and trenched Schottky diodes, a cavity (23) is provided between the bottom (25) of the trench electrode (11) and the bottom (27) of the trench (20) to reduce the dielectric coupling between the trench electrode (11) and the body portion at the bottom (27) of the trench in a compact manner. In power transistors, the reduction in dielectric coupling reduces switching power losses, and in Schottky diodes, it enables the trench width to be reduced.

REFERENCES:
patent: 5250450 (1993-10-01), Lee et al.
patent: 5612567 (1997-03-01), Baliga
patent: 5637898 (1997-06-01), Baliga
patent: 6413827 (2002-07-01), Farrar
patent: 6498382 (2002-12-01), Hirler et al.
patent: 6576953 (2003-06-01), Hirler
patent: WO0108226 (2001-02-01), None
“Power Semiconductor Devices” by B. Jayant Baliga, PWS Publishing Company; pp. 387 to 395.

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