Trenched MOSFET with guard ring and channel stop

Details Trenched MOSFET with guard ring and channel stop Trenched MOSFET with guard ring and channel stop

2009-10-23

2011-10-04

Doan, Theresa T (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S331000, C257S341000, C257S409000, C438S270000

Reexamination Certificate

active

08030702

ABSTRACT:
A trenched MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) with a guard ring and a channel stop, including: a substrate including an epi layer region on the top thereof; a plurality of source and body regions formed in the epi layer; a metal layer including a plurality of metal layer regions which are connected to respective source and body, and gate regions forming metal connections of the MOSFET; a plurality of metal contact plugs connected to respective metal layer regions; a plurality of gate structure filled with polysilicon to form a plurality of trenched gates on top of epi layer; an insulating layer deposited on the epi layer formed underneath the metal layer with a plurality of metal contact holes therein for contacting respective source and body regions; a guard ring wrapping around the metal layer corresponding to the gate region at the termination; and a channel stop which is a heavier N-type doping region aside the guard ring at the termination; Wherein the contact plugs connecting to the top metal layer are corresponding to the source and the body regions.

REFERENCES:
patent: 6049108 (2000-04-01), Williams et al.
patent: 6351018 (2002-02-01), Sapp

Affiliated with

Also associated with

Rating

Trenched MOSFET with guard ring and channel stop does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Trenched MOSFET with guard ring and channel stop, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Trenched MOSFET with guard ring and channel stop will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4274857