Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-09-11
2009-11-03
Tran, Minh-Loan T (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE29257
Reexamination Certificate
active
07612407
ABSTRACT:
A semiconductor power device comprising a termination area that includes a trenched gate runner electrically connected to a trenched gate of said semiconductor power device. The semiconductor power device further includes a trenched field plate disposed in a trench opened in the termination area and the trenched field plate is electrically connected to the trenched gate runner. A gate runner contact trench and a field plate contact trench opened through an insulation layer covering the gate runner and the trenched field plate for extending into a doped gate dielectric filling in the trenched gate runner and the field plate wherein the gate runner contact trench and the field plate contact trench filled with a gate runner contact plug and a field plate contact plug respectively. A gate metal disposed on top of the insulation layer to electrically contact the gate runner contact plug and the field plate contact plug for electrically interconnecting the trenched gate runner and the trenched field plate.
REFERENCES:
patent: 6833583 (2004-12-01), In't Zandt et al.
Ahmed Selim
Force-MOS Technology Corp. Ltd
Lin Bo-In
Tran Minh-Loan T
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