Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-08-11
2000-03-21
Hardy, David B.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257335, 257347, 257655, H01L 2978
Patent
active
060406003
ABSTRACT:
An n type diffusion region and a p type diffusion region are formed in a region sandwiched between trenches arranged at a first main surface of a semiconductor substrate. A p type well is formed in the n- and p-type diffusion regions nearer the first main surface. A source n.sup.+ diffusion region is formed at the first main surface within the p type well. A gate electrode layer is formed opposite to the p type well sandwiched between the n type diffusion region and the source n.sup.+ diffusion region with a gate insulating layer disposed therebetween. The n- and p-type diffusion regions each have an impurity concentration distribution diffused from a sidewall surface of a trench. Thus, a fine, micron-order pn repeat structure can be achieved with sufficient precision and a high breakdown voltage semiconductor device is thus obtained which has superior on-state voltage and breakdown voltage as well as fast switching characteristics.
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Minato Tadaharu
Uenishi Akio
Hardy David B.
Mitsubishi Denki & Kabushiki Kaisha
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