Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1996-10-31
1999-06-29
Fahmy, Wael
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257331, 257334, H01L 2976, H01L 2994, H01L 31062
Patent
active
059172169
ABSTRACT:
A trenched MOSFET in its on-state conducts current through an accumulation region and through an inverted depletion barrier layer located along the trench sidewalls. Blocking is achieved by gate control depletion of the adjacent region and by the depletion barrier layer (having the appearance of "ears" in a cross sectional view and being of opposite doping type to the adjacent region) which extends laterally from the trench sidewalls into the drift region. This MOSFET has superior on-state specific resistance to that of prior art trenched MOSFETs and also has good performance in terms of on state resistance, while having superior blocking characteristics to those of prior art trenched MOSFETs. The improvement in the blocking characteristic is provided by the depletion barrier layer which is a semiconductor doped region. In the blocking state, the depletion barrier layer is fully or almost fully depleted to prevent parasitic bipolar conduction. The shape and extent of the depletion barrier layer may be varied and more than one depletion barrier layer may be present.
REFERENCES:
patent: 4434433 (1984-02-01), Nishizawa
patent: 4791462 (1988-12-01), Blanchard et al.
patent: 4835586 (1989-05-01), Cogan
patent: 4914058 (1990-04-01), Blanchard
patent: 5021845 (1991-06-01), Hashimoto
patent: 5164325 (1992-11-01), Cogan et al.
patent: 5168331 (1992-12-01), Yilmaz
patent: 5177572 (1993-01-01), Murakami
patent: 5350934 (1994-09-01), Matsuda
patent: 5405794 (1995-04-01), Kim
patent: 5410170 (1995-04-01), Bulucea et al.
patent: 5430315 (1995-07-01), Rumennik
patent: 5473176 (1995-12-01), Kakumoto
patent: 5474943 (1995-12-01), Hshieh et al.
patent: 5488236 (1996-01-01), Baliga et al.
K. Sunouchi et al. "A Surrounding Gate Transistor (SGT) Cell for 64/256 Mbit DRAM s," IEDM Technical Digest 1989, pp. 2.1.1-2.1.4.
S. Watanabe et al. "A Novel Circuit Technology with Surrounding Gate Transistor (SGT's) for Ultra High Density DRAM's," IEEE Journal of Solid-State Circuits, vol. 30, No. 9, Sep. 1995, pp. 960-970.
Mader, H., "Electrical Properties of Bulk-Barrier Diodes," IEEE Transactions on Electron Devices, vol. ED-29, No. 11, Nov. 1982, pp. 1766-1771.
Mader, H., et al., "Bulk-Barrier Transistor," IEEE Transactions on Electron Devices, vol. ED-30, No. 10, Oct. 1983, pp. 1380-1386.
McCowen, A., et al., "Gate controlled bulk-barrier mechanism in an MOS power transistor," IEEE Proceedings, vol. 134, Pt. I, No. 6, Dec. 1987, pp. 165-169.
Baliga, B., et al., "The Accumulation-Mode Field-Effect Transistor: A New Ultralow On-Resistance MOSFET," IEEE Electron Device Letters, vol. 13, No. 8, Aug. 1992, pp. 427-429.
Syau, T., et al., "Comparison of Ultralow Specific On-Resistance Umosfet Structures: The ACCUFET, EXTFET, INVFET, and Conventional UMOSET's," IEEE Transactions on Electron Devices, vol. 41, No. 5, May 1994, pp. 800-808.
Chang Mike F.
Floyd Brian H.
Hshieh Fwu-Iuan
Pitzer Dorman C.
Fahmy Wael
Klivans Norman R.
Siliconix incorporated
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