Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1996-03-29
1996-11-26
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257331, 257332, 257333, H01L 2976, H01L 2994
Patent
active
055788513
ABSTRACT:
A trenched DMOS transistor is fabricated using seven masking steps. One masking step defines both the P+ deep body regions and the active portions of the transistor which are masked using a LOCOS process. A second masking step defines the insulating oxide in the termination region. The insulating (oxide) layer in the termination region is thus thicker than in the active region of the transistor, thereby improving process control and reducing substrate contamination during processing. Additionally, the thicker field oxide in the termination region improves electric field distribution so that avalanche breakdown occurs in the cell (active) region rather than in the termination region, and thus breakdown voltage behavior is more stable and predictable.
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Chang Mike F.
Ho Yueh-Se
Hshieh Fwu-Iuan
Owyang King
Klivans Norman R.
Ngo Ngan V.
Siliconix incorporated
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