Trench-type semiconductor memory device

Details Trench-type semiconductor memory device Trench-type semiconductor memory device

1992-04-21

1999-01-19

Fahmy, Wael

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257305, H01L 27108, H01L 2976

Patent

active

058616497

ABSTRACT:
A dynamic RAM in which a groove (20) is formed on the main surface of a semiconductor substrate; a highly concentrated semiconductor layer (80) having one conductive type is formed inside the groove (20) to a depth sufficient to contain the first and second impurity diffusion areas (53) and (22), which are formed on the top of this groove and have the opposite conductive type; a capacitor C.sub.1 formed inside the groove (20), while a transfer gate Tr.sub.1 is formed on the highly concentrated semiconductor layer (80); and the diffusion area (53) is used to connect them.

REFERENCES:
patent: 4922313 (1990-05-01), Tsuchiya
patent: 4999689 (1991-03-01), Iguchi et al.
patent: 5041887 (1991-08-01), Kumagai et al.
patent: 5105245 (1992-04-01), Riemenschneider et al.
patent: 5216265 (1993-06-01), Anderson et al.

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