Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-07-26
2011-07-26
Loke, Steven (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S303000, C257S296000, C438S243000
Reexamination Certificate
active
07985998
ABSTRACT:
A trench-type semiconductor device structure is disclosed. The structure includes a semiconductor substrate, a gate dielectric layer and a substrate channel structure. The semiconductor substrate includes a trench having an upper portion and a lower portion. The upper portion includes a conductive layer formed therein. The lower portion includes a trench capacitor formed therein. The gate dielectric layer is located between the semiconductor substrate and the conductive layer. The substrate channel structure with openings, adjacent to the trench, is electrically connected to the semiconductor substrate via the openings.
REFERENCES:
patent: 6200873 (2001-03-01), Schrems et al.
patent: 6288422 (2001-09-01), Mandelman et al.
patent: 6410391 (2002-06-01), Zelsacher
patent: 6444548 (2002-09-01), Divakaruni et al.
patent: 6501117 (2002-12-01), Radens et al.
patent: 6576945 (2003-06-01), Mandelman et al.
patent: 6822281 (2004-11-01), Voigt et al.
patent: 7005341 (2006-02-01), Wu
patent: 7449382 (2008-11-01), Chen et al.
patent: 7459741 (2008-12-01), Kidoh et al.
patent: 2005/0083724 (2005-04-01), Manger et al.
patent: 2006/0076595 (2006-04-01), Wu
patent: 2007/0085123 (2007-04-01), Chou et al.
patent: 2008/0277709 (2008-11-01), Lee et al.
patent: 2010/0022065 (2010-01-01), Lin et al.
patent: 232537 (2005-05-01), None
Chang Ming-Cheng
Liao Hung-Chang
Lin Shian-Jyh
Shih Neng Tai
Goodwin David
Ingrassia Fisher & Lorenz P.C.
Loke Steven
Nanya Technology Corp.
LandOfFree
Trench-type semiconductor device structure does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Trench-type semiconductor device structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Trench-type semiconductor device structure will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2629976