Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-03-27
2007-03-27
Pizarro, Marcos D. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S330000, C257SE29257
Reexamination Certificate
active
11097998
ABSTRACT:
An active groove filled region23ais kept at a portion of an active groove22aconnecting to an embedded region24positioned below a gate groove83. The active groove filled region23aconnects to a source electrode film58aso as to have the same electric potential as a source region64. When a reverse bias is applied between a base region32aand a conductive layer12, a reverse bias is also applied between the embedded region24and the conductive layer12; and therefore, depletion layers spread out together and a withstanding voltage is increased.
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Kitada Mizue
Kunori Shinji
Kurosaki Toru
Ohshima Kosuke
Shishido Hiroaki
Armstrong Kratz Quintos Hanson & Brooks, LLP
Pizarro Marcos D.
Shindengen Electric Manufacturing Co. Ltd.
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