Trench type mosgated device with strained layer on trench...

Details Trench type mosgated device with strained layer on trench... Trench type mosgated device with strained layer on trench...

2007-07-03

2007-07-03

Ngô, Ngân V. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S331000, C257S332000, C257S616000, C257SE29193, C257SE21182

Reexamination Certificate

active

10911170

ABSTRACT:
A MOSgated trench device has a reduced on resistance by forming a less than about a 13 nm thick strained SiGe layer on the silicon surface of the trenches and forming a thin (30 nm or less) layer of epitaxially deposited silicon on the SiGe layer which epi layer is converted to a gate oxide layer. The conduction channel formed by the SiGe layer is permanently strained to increase its mobility particularly hole mobility.

REFERENCES:
patent: 6331467 (2001-12-01), Brown et al.
patent: 7115480 (2006-10-01), Forbes
patent: 2004/0173798 (2004-09-01), Forbes
patent: 2005/0032321 (2005-02-01), Huang et al.
patent: 2005/0287752 (2005-12-01), Nouri et al.
patent: 2006/0051922 (2006-03-01), Huang et al.
patent: 2006/0118880 (2006-06-01), Komoda
patent: 2006/0124935 (2006-06-01), Bhattacharyya
patent: 2006/0138398 (2006-06-01), Shimamune et al.
patent: 2006/0141687 (2006-06-01), Bhattacharyya
patent: 2006/0214222 (2006-09-01), Challa et al.
patent: 2006/0220153 (2006-10-01), Murthy et al.
patent: 2006/0240611 (2006-10-01), Chan et al.
patent: 2006/0246680 (2006-11-01), Bhattacharyya

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