Trench transistors and methods for fabricating trench...

Details Trench transistors and methods for fabricating trench... Trench transistors and methods for fabricating trench...

2005-06-07

2005-06-07

Hu, Shouxiang (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S329000, C257S332000, C257S335000

Reexamination Certificate

active

06903416

ABSTRACT:
A trench transistor has a source zone introduced from a doped spacer into a body region and a channel running vertically along the insulation layer of the trench. A method is taught for fabricating the trench transistor of this type.

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patent: 6498071 (2002-12-01), Hijzen et al.
patent: 2002/0115257 (2002-08-01), Inagawa et al.
patent: 2002/0140026 (2002-10-01), Ishikawa et al.
patent: 41 11 046 (1991-10-01), None
patent: 0 962 987 (1999-12-01), None

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