Trench transistor with source contact in trench

Details Trench transistor with source contact in trench Trench transistor with source contact in trench

1998-02-24

1999-12-21

Loke, Steven H.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257330, 257332, 257334, 257408, H01L 2976, H01L 2994, H01L 31062, H01L 31113

Patent

active

060052724

ABSTRACT:
An IGFET with a gate electrode and a source contact in a trench is disclosed. The IGFET includes a trench with opposing sidewalls and a bottom surface in a semiconductor substrate, a gate insulator on the bottom surface, a gate electrode on the gate insulator, a source contact on the bottom surface, insulative spacers between the gate electrode, the source contact and the sidewalls, and a source and drain adjacent to the bottom surface. Advantageously, the source contact overlaps the trench, thereby improving packing density.

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