Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1998-02-24
1999-10-05
Martin-Wallace, Valencia
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257332, 257336, H01L 2976, H01L 31062
Patent
active
059628944
ABSTRACT:
An IGFET with a gate electrode and metal spacers in a trench is disclosed. The IGFET includes a trench with opposing sidewalls and a bottom surface in a semiconductor substrate, metal spacers adjacent to the sidewalls and the bottom surface, a gate insulator on the bottom surface between the metal spacers, protective insulators on the metal spacers, a gate electrode on the gate insulator and protective insulators, and a source and drain adjacent to the bottom surface. A method of forming the IGFET includes implanting a doped layer into the substrate, etching completely through the doped layer and partially through the substrate to form the trench and split the doped layer into source and drain regions, applying a high-temperature anneal to diffuse the source and drain regions beneath the bottom surface, depositing a blanket layer of conductive metal over the substrate and applying an anisotropic etch to form the metal spacers, depositing a continuous insulative layer over the substrate to provide the gate insulator and the protective insulators, depositing a blanket layer of gate electrode material over the substrate, and polishing the gate electrode material so that the gate electrode is substantially aligned with a top surface of the substrate. Advantageously, the channel length is significantly smaller than the trench length, and the metal spacers reduce the parasitic resistance of lightly doped source and drain regions.
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U.S. Application Serial No. 08/703,272, filed Aug. 16, 1996, entitled "Insulated-Gate Field-Effect Transistor with Metal Spacers", by Gardner et al.
Dawson Robert
Fulford Jr. H. Jim
Gardner Mark I.
Hause Frederick N.
Michael Mark W.
Advanced Micro Devices , Inc.
Eckert II George C.
Martin-Wallace Valencia
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