Trench transistor structure comprising at least two vertical tra

Details Trench transistor structure comprising at least two vertical tra Trench transistor structure comprising at least two vertical tra

1997-07-18

1999-03-23

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257330, 257331, 257332, 257374, 257394, 257397, 257241, 257242, 257244, 257302, 438156, 438173, 438192, 438193, 438206, 438259, 438268, 438270, H01L 2170

Patent

active

058863826

ABSTRACT:
A method for forming a trench transistor structure begins by forming a buried layers (12 and 16) and a doped well (22) in a substrate (10) via epitaxial growth processing. A trench region (24) is then etched into the substrate (10) to expose a the layer (12). A conductive sidewall spacer (28) is formed within the trench (24) as a gate electrode. The spacer (28) gates a first transistor (12, 28, 32) located adjacent a first half of the trench (24) and a second transistor (12, 28, 34) located adjacent a second half of the trench (24). Region (12) is a common electrode wherein the channel regions of both the first and second transistor are coupled in a serial manner through the region (12).

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