Trench transistor and method for fabricating a trench...

Details Trench transistor and method for fabricating a trench... Trench transistor and method for fabricating a trench...

2006-11-30

2011-10-18

Wagner, Jenny L (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE29024

Reexamination Certificate

active

08039894

ABSTRACT:
A method is disclosed for fabricating a trench transistor, in which there are formed, within an epitaxial layer deposited above a substrate of a first conductivity type, a trench and, within the trench, a gate dielectric and a gate electrode and, in a body region of a second conductivity type adjoining the trench a source region of the first conductivity type, a drift region of the first conductivity type forming a drain zone being formed at the end of the junction between the substrate and the epitaxial layer by means of one or more high-energy implantations, the lower end of the trench projecting into said drift region, and to a trench transistor of this type formed as a low-voltage transistor.

REFERENCES:
patent: 5442214 (1995-08-01), Yang
patent: 5489787 (1996-02-01), Amaratunga et al.
patent: 5814858 (1998-09-01), Williams
patent: 5929481 (1999-07-01), Hshieh et al.
patent: 6511886 (2003-01-01), Kim et al.
patent: 2003/0006454 (2003-01-01), Darwish

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